Picture of Iqe logo

IQE Iqe News Story

0.000.00%
gb flag iconLast trade - 00:00
TechnologyHighly SpeculativeSmall CapValue Trap

REG - IQE PLC - IQE plc: IQE and X-FAB sign JDA for GaN Power

For best results when printing this announcement, please click on link below:
https://newsfile.refinitiv.com/getnewsfile/v1/story?guid=urn:newsml:reuters.com:20250410:nRSJ3797Ea&default-theme=true

RNS Number : 3797E  IQE PLC  10 April 2025

IQE plc

 

 

Cardiff, UK

10 April 2025

IQE and X-FAB sign Joint Development Agreement for GaN Power

-     Developing a market-ready GaN Power Platform with a scalable
outsourced manufacturing model

 

IQE plc (AIM:  IQE, "IQE" or the "Group"), the leading global supplier of
compound semiconductor wafer products and advanced material solutions, and
X-FAB Silicon Foundries SE, the leading analog/mixed-signal and specialty
foundry, are pleased to announce a Joint Development Agreement (JDA) to create
a European-based GaN Power device platform solution.

With an initial two-year scope of work, IQE and X-FAB will collaborate to
develop a 650V GaN device. The agreement will leverage IQE's GaN epitaxy
design and process expertise along with X-FAB's proven technology development
and device fabrication capabilities to offer an optimised technology-substrate
combination for automotive, data centre and consumer applications.

This collaboration will provide fabless semiconductor companies with a
leading-edge, off-the-shelf GaN platform, accelerating their innovation cycles
and time-to-market. The technology will also serve as a foundation for future
product development extending beyond 650V to address the growing market demand
for Power Electronics.

Jutta Meier, Interim CEO and Chief Financial Officer of IQE commented:

 

"We are excited to join forces with X-FAB to develop a world-class GaN Power
foundry solution in Europe, providing outsourced optionality for our fabless
customers. Building on our GaN epitaxy expertise and recent investment in
additional GaN reactor capacity, this agreement aligns with our GaN
diversification strategy, expands our customer reach and accelerates
time-to-market for GaN Power applications."

 

Jörg Doblaski, Chief Technology Officer at X-FAB, commented:

 

"By combining our long-standing expertise in device fabrication and design
enablement with IQE's epitaxy leadership, we are creating a unique, turnkey
GaN Power platform. In addition to our existing GaN technology, this
collaboration provides a compelling alternative to existing supply chain
models and strengthens Europe's position in next-generation Power
semiconductor technology."

 

Glossary

GaN - Gallium Nitride

 

 

Contacts:

 

IQE plc

+44 (0) 29 2083 9400

Mark Cubitt

Jutta Meier

Amy Barlow

 

Peel Hunt (Nomad and Joint Broker)

+44 (0) 20 7418 8900

Ben Cryer

Kate Bannatyne

Adam Telling

 

Deutsche Numis (Joint Broker)

+44 (0) 20 7260 1000

Simon Willis

Hugo Rubinstein

Iqra Amin

 

Headland Consultancy (Financial PR)
+ 44 (0) 20 38054822

Andy Rivett-Carnac: +44 (0) 7968 997 365

Chloe Francklin: +44 (0)78 3497 4624

 

X-FAB

Anja Noack

MarCom Manager

X-FAB Silicon Foundries

+49-361-427-6162
anja.noack@xfab.com (mailto:anja.noack@xfab.com)

 

 

 

About IQE

 

http://iqep.com (http://iqep.com)

 

IQE is the leading global supplier of advanced compound semiconductor wafers
and materials solutions that enable a diverse range of applications across:

 

·    Smart Connected Devices

·    Communications Infrastructure

·    Automotive and Industrial

·    Aerospace and Security

 

As a scaled global epitaxy wafer manufacturer, IQE is uniquely positioned in
this market which has high barriers to entry. IQE supplies the global market
and is enabling customers to innovate at chip and OEM level. By leveraging the
Group's intellectual property portfolio including know-how and patents, it
produces epitaxy wafers of superior quality, yield and unit economics.

IQE is headquartered in Cardiff UK, with employees across manufacturing
locations in the UK, US and Taiwan, and is listed on the AIM Stock Exchange in
London.

 

 

About X-FAB

 

X-FAB is a global foundry group providing a comprehensive set of specialty
technologies and design IP to enable its customers to develop world-leading
semiconductor products that are manufactured at X-FAB's six wafer fabs located
in Malaysia, Germany, France, and the United States. With its expertise in
analog/mixed-signal technologies, microsystems/MEMS and silicon carbide (SiC),
X-FAB is the development and manufacturing partner for its customers,
primarily serving the automotive, industrial and medical end markets. X-FAB
has approximately 4,500 employees and has been listed on Euronext Paris since
April 2017 (XFAB). For more information, please visit http://xfab.com
(http://xfab.com) .

 

 

This information is provided by RNS, the news service of the London Stock Exchange. RNS is approved by the Financial Conduct Authority to act as a Primary Information Provider in the United Kingdom. Terms and conditions relating to the use and distribution of this information may apply. For further information, please contact
rns@lseg.com (mailto:rns@lseg.com)
 or visit
www.rns.com (http://www.rns.com/)
.

RNS may use your IP address to confirm compliance with the terms and conditions, to analyse how you engage with the information contained in this communication, and to share such analysis on an anonymised basis with others as part of our commercial services. For further information about how RNS and the London Stock Exchange use the personal data you provide us, please see our
Privacy Policy (https://www.lseg.com/privacy-and-cookie-policy)
.   END  AGRPKCBQPBKDAQK

Recent news on Iqe

See all news